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MRF8P8300HR6 mrf8p8300hsr6 1 rf device data freescale semiconductor rf power field effect transistors n--channel enhancement--mode lateral mosfets designed for w--cdma and lte base station applications with frequencies from 790 to 820 mhz. can be used in class ab and class c for all typical cellular base station modulation formats. ? typical single--carrier w--cdma performance: v dd =28volts,i dq = 2000 ma, p out = 96 watts avg., iq magnitude clipping, channel bandwidth = 3.84 mhz, input signal par = 7.5 db @ 0.01% probability on ccdf. frequency g ps (db) d (%) output par (db) acpr (dbc) 790 mhz 20.9 35.2 6.2 --38.1 805 mhz 21.0 35.5 6.2 --38.1 820 mhz 20.9 35.7 6.1 --38.2 ? capable of handling 10:1 vswr, @ 32 vdc, 805 mhz, 500 watts cw output power (3 db input overdrive from rated p out ), designed for enhanced ruggedness ? typical p out @ 1 db compression point ? 340 watts cw features ? 100% par tested for guaranteed output power capability ? characterized with series equival ent large--signal impedance parameters and common source s--parameters ? internally matched for ease of use ? integrated esd protection ? greater negative gate--source voltage range for improved class c operation ? designed for digital predistortion error correction systems ? optimized for doherty applications ? rohs compliant ? in tape and reel. r6 suffix = 150 units, 56 mm tape width, 13 inch reel. for r5 tape and reel option, see p. 14. table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +70 vdc gate--source voltage v gs --6.0, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg --65 to +150 c case operating temperature t c 150 c operating junction temperature (1,2) t j 225 c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 80 c, 96 w cw, 28 vdc, i dq = 2000 ma, 820 mhz case temperature 85 c, 300 w cw, 28 vdc, i dq = 2000 ma, 820 mhz r jc 0.26 0.21 c/w 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. document number: mrf8p8300h rev. 0, 1/2011 freescale semiconductor technical data 790--820 mhz, 96 w avg., 28 v single w--cdma lateral n--channel rf power mosfets MRF8P8300HR6 mrf8p8300hsr6 case 375d--05, style 1 ni--1230 MRF8P8300HR6 case 375e--04, style 1 ni--1230s mrf8p8300hsr6 (top view) rf outa /v dsa 31 42 rf outb /v dsb rf ina /v gsa rf inb /v gsb figure 1. pin connections ? freescale semiconductor, inc., 2011. a ll rights reserved.
2 rf device data freescale semiconductor MRF8P8300HR6 mrf8p8300hsr6 table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2 (minimum) machine model (per eia/jesd22--a115) a (minimum) charge device model (per jesd22--c101) iv (minimum) table 4. electrical characteristics (t a =25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics (1) zero gate voltage drain leakage current (v ds =70vdc,v gs =0vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds =28vdc,v gs =0vdc) i dss ? ? 1 adc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (1) (v ds =10vdc,i d = 400 adc) v gs(th) 1.5 2.3 3.0 vdc gate quiescent voltage (v dd =28vdc,i dq = 2000 ma, measured in functional test) v gs(q) 2.3 3.1 3.8 vdc drain--source on--voltage (1) (v gs =10vdc,i d =3adc) v ds(on) 0.1 0.2 0.3 vdc functional tests (2) (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq = 2000 ma, p out = 96 w avg., f = 820 mhz, single--carrier w--cdma, iq magnitude clipping, input signal par = 7.5 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. power gain g ps 20.0 20.9 23.5 db drain efficiency d 34.5 35.7 ? % output peak--to--average ratio @ 0.01% probability on ccdf par 5.9 6.1 ? db adjacent channel power ratio acpr ? --38.2 --36.5 dbc input return loss irl ? -- 1 2 -- 9 db typical broadband performance (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq = 2000 ma, p out =96wavg., single--carrier w--cdma, iq magnitude clipping, input signal par = 7.5 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. frequency g ps (db) d (%) output par (db) acpr (dbc) irl (db) 790 mhz 20.9 35.2 6.2 --38.1 -- 1 1 805 mhz 21.0 35.5 6.2 --38.1 -- 1 2 820 mhz 20.9 35.7 6.1 --38.2 -- 1 2 1. each side of device measured separately. 2. part internally matched both on input and output. (continued)
MRF8P8300HR6 mrf8p8300hsr6 3 rf device data freescale semiconductor table 4. electrical characteristics (t a =25 c unless otherwise noted) (continued) characteristic symbol min typ max unit typical performances (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq = 2000 ma, 790--820 mhz bandwidth p out @ 1 db compression point, cw p1db ? 340 ? w imd symmetry @ 290 w pep, p out where imd third order intermodulation ? 30 dbc (delta imd third order intermodulation between upper and lower sidebands > 2 db) imd sym ? 35 ? mhz vbw resonance point (imd third order intermodulation inflection point) vbw res ? 35 ? mhz gain flatness in 30 mhz bandwidth @ p out =96wavg. g f ? 0.5 ? db gain variation over temperature (--30 cto+85 c) ? g ? 0.0185 ? db/ c output power variation over temperature (--30 cto+85 c) ? p1db ? 0.0076 ? db/ c
4 rf device data freescale semiconductor MRF8P8300HR6 mrf8p8300hsr6 figure 2. MRF8P8300HR6(hsr6) t est circuit component layout *c5, c6, c47, and c48 are mounted vertically. c58 cut out area mrf8p8300h rev. 2 c1 c2 c3 c4 c5* c6* c7 c8 c9 c10 c18 c17 c20 c19 c22 c21 c15 c16 c12 c14 c11 c13 c24 c23 c25 c27 c29 c53 c57 c55 c56 c54 c52 c51 c50 c28 c26 c30 c32 c34 c38 c40 c36 c35 c42 c41 c37 c39 c44 c43 c46 c45 c48* c47* c49 c31 c33 b1 b2 r2 r1 table 5. MRF8P8300HR6(hsr6) test circ uit component designations and values part description part number manufacturer b1, b2 short ferrite beads mpz2012s300at000 tdk c1, c2, c39, c40, c41, c42 2.1 pf chip capacitors atc100b2r1bt500xt atc c3, c49, c50 1.0 pf chip capacitors atc100b1r0bt500xt atc c4 120 pf chip capacitor atc100b121jt500xt atc c5, c6, c11, c12, c47, c48 39 pf chip capacitors atc100b390jt500xt atc c7, c8, c45, c46 1.1 pf chip capacitors atc100b1r1bt500xt atc c9, c10 4.7 f, 50 v chip capacitors c4532x5r1h475kt tdk c13, c14, c19, c20, c25, c26 10 pf chip capacitors atc100b100jt500xt atc c15, c16, c35, c36 4.7 pf chip capacitors atc100b4r7ct500xt atc c17, c18 4.3 pf chip capacitors atc100b4r3ct500xt atc c21, c22 8.2 pf chip capacitors atc100b8r2ct500xt atc c23, c24 22 f electrolytic capacitors uud1v220mcl1gs nichicon c27, c28 20 pf chip capacitors atc100b200jt500xt atc c29, c30 30 pf chip capacitors atc100b300jt500xt atc c31, c32 13 pf chip capacitors atc100b130jt500xt atc c33, c34 7.5 pf chip capacitors atc100b7r5ct500xt atc c37, c38 1.5 pf chip capacitors atc100b1r5bt500xt atc c43, c44 0.8 pf chip capacitors atc100b0r8bt500xt atc c51, c52 2.0 pf chip capacitors atc100b2r0bt500xt atc c53, c54, c55, c56 22 f, 50 v chip capacitors c5750jf1h226zt tdk c57, c58 470 f, 63 v electrolytic capacitors mcgpr63v477m13x26--rh multicomp r1, r2 3 ? chip resistors crcw12063r00fnea vishay pcb 0.030 , r =3.5 rf35a2 taconic
MRF8P8300HR6 mrf8p8300hsr6 5 rf device data freescale semiconductor 4 2 2 4 2 2 single--ended quadrature combined doherty push--pull 4 4 4 4 figure 3. possible circuit topologies devices are tested in a parallel configuration
6 rf device data freescale semiconductor MRF8P8300HR6 mrf8p8300hsr6 typical characteristics irl, input return loss (db) 730 irl g ps acpr f, frequency (mhz) figure 4. output peak--to--average ratio compression (parc) broadband performance @ p out = 96 watts avg. -- 1 6 0 -- 4 -- 8 -- 1 2 25 24 -- 4 0 36 34 32 30 -- 3 0 -- 3 2 -- 3 4 -- 3 6 d , drain efficiency (%) g ps , power gain (db) 22 20 18 16 750 770 790 810 830 850 870 890 28 -- 3 8 -- 2 0 parc parc (db) -- 2 . 2 -- 1 -- 1 . 3 -- 1 . 6 -- 1 . 9 -- 2 . 5 acpr (dbc) figure 5. intermodulation distortion products versus two--tone spacing two--tone spacing (mhz) 10 -- 6 0 -- 1 0 -- 2 0 -- 3 0 -- 5 0 1 100 imd, intermodulatio n distortion (dbc) -- 4 0 im3--u im3--l im5--u im5--l im7--l im7--u v dd =28vdc,p out = 290 w (pep), i dq = 2000 ma two--tone measurements (f1 + f2)/2 = center frequency of 805 mhz figure 6. output peak--to--average ratio compression (parc) versus output power 1 p out , output power (watts) -- 1 -- 3 -- 5 70 0 -- 2 -- 4 output compression at 0.01% probability on ccdf (db) 40 100 130 20 56 50 44 38 32 26 d , drain efficiency (%) --1db=75.1w --2db=110.5w --3 db = 153.4 w 190 d acpr parc acpr (dbc) -- 5 5 -- 2 5 -- 3 0 -- 3 5 -- 4 5 -- 4 0 -- 5 0 22 g ps , power gain (db) 21.5 21 20.5 20 19.5 19 g ps 23 21 19 17 15 v dd =28vdc,i dq = 2000 ma, f = 805 mhz single--carrier w--cdma, 3.84 mhz channel bandwidth v dd =28vdc,p out =96w(avg.),i dq = 2000 ma single--carrier w--cdma, 3.84 mhz channel bandwidth input signal par = 7.5 d b @ 0.01% pr obabilit y on ccdf d 160 input signal par = 7.5 db @ 0.01% probabilit y on ccdf
MRF8P8300HR6 mrf8p8300hsr6 7 rf device data freescale semiconductor typical characteristics 1 g ps p out , output power (watts) avg. figure 7. single--carrier w--cdma power gain, drain efficiency and acpr versus output power -- 1 0 -- 2 0 17 23 0 66 33 d , drain efficiency (%) g ps , power gain (db) 22 10 100 acpr (dbc) 20 19 18 0 -- 3 0 -- 4 0 -- 6 0 figure 8. broadband frequency response 0 24 580 f, frequency (mhz) v dd =28vdc p in =0dbm i dq = 2000 ma 20 16 12 640 gain (db) gain 700 760 820 880 940 1000 1060 irl -- 2 0 10 5 0 -- 5 -- 1 0 irl (db) 8 -- 1 5 790 mhz 21 55 44 22 11 4 400 -- 5 0 805 mhz 820 mhz 790 mhz 805 mhz 820 mhz 820 mhz 790 mhz 805 mhz v dd =28vdc,i dq = 2000 ma, single--carrier w--cdma, 3.84 mhz channel bandwidth input signal par = 7.5 db @ 0.01% probabilit y on ccdf d acpr w--cdma test signal 0.0001 100 0 peak--to--average (db) figure 9. ccdf w--cdma iq magnitude clipping, single--carrier test signal 10 1 0.1 0.01 0.001 24 68 probability (%) w--cdma. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. input signal par = 7.5 db @ 0.01% probabilit y on ccdf input signal 10 -- 6 0 --100 10 (db) -- 2 0 -- 3 0 -- 4 0 -- 5 0 -- 7 0 -- 8 0 -- 9 0 3.84 mhz channel bw 7.2 1.8 5.4 3.6 0 -- 1 . 8 -- 3 . 6 -- 5 . 4 -- 9 9 f, frequency (mhz) figure 10. single--carrier w--cdma spectrum -- 7 . 2 --acpr in 3.84 mhz integrated bw +acprin3.84mhz integrated bw -- 1 0 0 13579
8 rf device data freescale semiconductor MRF8P8300HR6 mrf8p8300hsr6 v dd =28vdc,i dq = 2000 ma, p out =96wavg. f mhz z source ? z load ? 730 1.07 -- j1.15 0.86 -- j0.18 750 1.06 -- j0.97 0.90 + j0.04 770 1.11 -- j0.78 1.07 + j0.46 790 1.05 -- j0.62 1.28 -- j0.67 810 1.11 -- j0.45 0.88 -- j0.12 830 1.19 -- j0.26 0.87 + j0.04 850 1.95 + j0.48 0.82 + j0.05 870 1.35 -- j1.66 0.71 + j0.12 890 0.95 -- j1.07 0.59 + j0.22 z source = test circuit impedance as measured from gate to ground, gate leads are tied together. z load = test circuit impedance as measured from drain to ground, drain leads are tied together. figure 11. series equivalent source and load impedance z source z load input matching network device under test output matching network
MRF8P8300HR6 mrf8p8300hsr6 9 rf device data freescale semiconductor alternative peak tune load pull characteristics p in , input power (dbm) v dd =28vdc,i dqa = 1000 ma, pulsed cw, 10 sec(on), 10% duty cycle 57 54 51 58.5 55.5 46.5 p out , output power (dbm) note: load pull test fixture tuned for peak p1db output power @ 28 v 52.5 60 25 61.5 49.5 48 26.5 ideal actual 822 mhz 45 28 29.5 31 32.5 34 35.5 37 38.5 40 41.5 806 mhz 790 mhz 822 mhz 806 mhz 790 mhz f (mhz) p1db p3db watts dbm watts dbm 790 288 54.6 363 55.6 806 299 54.8 366 55.6 822 287 54.6 349 55.4 test impedances per compression level f (mhz) z source ? z load ? 790 p1db 1.04 -- j0.98 0.78 -- j0.73 806 p1db 1.16 -- j1.39 0.76 -- j0.71 822 p1db 1.24 -- j1.73 0.76 -- j0.74 figure 12. pulsed cw output power versus input power @ 28 v note: measurement made on a per side basis.
10 rf device data freescale semiconductor MRF8P8300HR6 mrf8p8300hsr6 package dimensions
MRF8P8300HR6 mrf8p8300hsr6 11 rf device data freescale semiconductor
12 rf device data freescale semiconductor MRF8P8300HR6 mrf8p8300hsr6
MRF8P8300HR6 mrf8p8300hsr6 13 rf device data freescale semiconductor
14 rf device data freescale semiconductor MRF8P8300HR6 mrf8p8300hsr6 product documentation, tools and software refer to the following documents, tools and software to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file for software and tools, do a part number search at http://www.fr eescale.com, and select the ?part number? link. go to the software & tools tab on the part?s product summary page to download the respective tool. r5 tape and reel option r5 suffix = 50 units, 56 mm tape width, 13 inch reel. the r5 tape and reel option for mrf8p8300h and mrf8p8300hs parts will be available for 2 years after release of mrf8p8300h and mrf8p8300hs. freescale semiconductor, inc. reserves the right to limit the quantities that will be delivered in the r5 tape and reel option. at the end of the 2 year period customers who have purchased these devices in the r5 tape and reel option will be offered mrf8p8300h and mr f8p8300hs in the r6 tape and reel option. revision history the following table summarizes revisions to this document. revision date description 0 jan. 2011 ? initial release of data sheet
MRF8P8300HR6 mrf8p8300hsr6 15 rf device data freescale semiconductor information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regar ding the suitab ility of its products for any particula r purpose, nor does freescale semiconductor assu me any liability ari sing out of the app lication or use of any product or circuit, and specifically discl aims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems int ended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subs idiaries, affiliate s, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale t and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2011. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33169354848(french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1--8--1, shimo--meguro, meguro--ku, tokyo 153--0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center 1--800--441--2447 or +1--303--675--2140 fax: +1--303--675--2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf8p8300h rev. 0, 1/2011

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